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| BYG10 Vishay Telefunken Silicon Mesa SMD Rectifier Features D D D D D Controlled avalanche characteristics Glass passivated junction Low reverse current High surge current capability Wave and reflow solderable 15 811 Applications Surface mounting General purpose rectifier Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Test Conditions Type BYG10D BYG10G BYG10J BYG10K BYG10M Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM IFAV Tj=Tstg I(BR)R=1A, Tj=25C ER Value 200 400 600 800 1000 30 1.5 -55...+150 20 Unit V V V V V A A C mJ Peak forward surge current Average forward current Junction and storage temperature range Pulse energy in avalanche mode, non repetitive (inductive load switch off) tp=10ms, half sinewave Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Junction lead TL=const. Junction ambient mounted on epoxy-glass hard tissue mounted on epoxy-glass hard tissue, 50mm2 35mm Cu mounted on Al-oxid-ceramic (Al2O3), 50mm2 35mm Cu Symbol RthJL RthJA RthJA RthJA Value 25 150 125 100 Unit K/W K/W K/W K/W Document Number 86008 Rev. 3, 24-Jun-98 www.vishay.de * FaxBack +1-408-970-5600 1 (5) BYG10 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Reverse recovery time Test Conditions IF=1A IF=1.5A VR=VRRM VR=VRRM, Tj=100C IF=0.5A, IR=1A, iR=0.25A Type Symbol VF VF IR IR trr Min Typ Max 1.1 1.15 1 10 4 Unit V V mA mA ms Characteristics (Tj = 25_C unless otherwise specified) 100 I R - Reverse Current ( mA ) IF - Forward Current ( A ) 100 10 10 Tj = 125C 1 Tj = 75C 0.1 Tj = 25C 0 0.6 1.2 1.8 2.4 3.0 1 0.1 VR = VR RM 0.01 0 40 80 120 160 200 0.01 Tj - Junction Temperature ( C ) 94 9284 94 9180 VF - Forward Voltage ( V ) Figure 1. Typ. Reverse Current vs. Junction Temperature Figure 3. Typ. Forward Current vs. Forward Voltage 5000 I FAV- Average Forward Current ( A ) t rr - Reverse Recovery Time ( ns ) 2.0 1.6 1.2 100K/W 0.8 0.4 150K/W 0 0 40 80 120 160 200 125K/W RthJA=25K/W Tamb= 125C 4000 Tamb= 100C 3000 Tamb = 75C 2000 1000 IR=0.5A, iR=0.125A 0 0 0.2 0.4 0.6 0.8 1.0 Tamb= 50C Tamb = 25C 94 9179 Tamb - Ambient Temperature ( C ) 94 9544 IF - Forward Current ( A ) Figure 2. Max. Average Forward Current vs. Ambient Temperature Figure 4. Typ. Reverse Recovery Time vs. Forward Current www.vishay.de * FaxBack +1-408-970-5600 2 (5) Document Number 86008 Rev. 3, 24-Jun-98 BYG10 Vishay Telefunken 2000 Qrr - Reverse Recovery Charge ( nC ) Tamb= 125C Tamb= 100C Tamb= 75C 1200 Tamb= 50C Tamb= 25C 1600 800 400 IR=0.5A, iR=0.125A 0 0 0.2 0.4 0.6 0.8 1.0 94 9338 IF - Forward Current ( A ) Figure 5. Typ. Reverse Recovery Charge vs. Forward Current Z thp - Thermal Resistance for Pulse Cond. (K/W) 1000 125K/W DC 100 tp/T=0.5 tp/T=0.2 10 tp/T=0.1 tp/T=0.05 tp/T=0.02 tp/T=0.01 1 10-5 10-4 10-3 10-2 10-1 100 101 102 Single Pulse 94 9339 tp - Pulse Length ( s ) Figure 6. Thermal Response Document Number 86008 Rev. 3, 24-Jun-98 www.vishay.de * FaxBack +1-408-970-5600 3 (5) BYG10 Vishay Telefunken Dimensions in mm 14275 www.vishay.de * FaxBack +1-408-970-5600 4 (5) Document Number 86008 Rev. 3, 24-Jun-98 BYG10 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 86008 Rev. 3, 24-Jun-98 www.vishay.de * FaxBack +1-408-970-5600 5 (5) |
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